Industrial Plasma Engineering: Volume 2 - Applications to Nonthermal Plasma ProcessingWritten by a leading expert in the field, the paperback edition of Industrial Plasma Engineering, Volume 2: Applications to Nonthermal Plasma Processing provides a background in the principles and applications of low temperature, partially ionized Lorentzian plasmas that are used industrially. The book also presents a description of plasma-related processes and devices that are of commercial interest. The text is suitable for students or in-service users with a physics and calculus background at the sophomore level. These two volumes are intended to be used as textbooks at the senior or first-year graduate level by students from all engineering and physical science disciplines and as a reference source by in-service engineers. |
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Revisar pag 285, contiene entradas y salidas del sistema de plasma
Contents
Surface Modification by Implantation and Diffusion | 399 |
ThinFilm Deposition by Evaporative Condensation | 451 |
Plasma Chemical Vapor Deposition PCVD | 502 |
Plasma Etching | 540 |
Appendices | 614 |
B Physical Constants | 623 |
Introduction 1 | ix |
Contents | xi |
Specialized Techniques and Devices for Plasma Processing 196 | 196 |
Ionizing Radiation Sources 223 | 223 |
Dark Electrical Discharges in Cases 237 | 237 |
Parametric Plasma Effects On Plasma Processing 240 | 240 |
Diagnostics for Plasma Processing 284 | 284 |
Plasma Treatment of Surfaces 335 | 335 |
Inductive RF Electrical Discharges in Gases 391 | 391 |
Surface Modification by Implantation and Diffusion 399 | 399 |
Surface Interactions in Plasma Processing 1 | 1 |
Kinetic Theory of Gases 34 | 34 |
Atmospheric Pressure Plasma Sources 37 | 37 |
Motion of Charges in Electric and Magnetic Fields 54 | 54 |
Characteristics of Plasma 117 | 69 |
Vacuum Plasma Sources 74 | 74 |
Plasma Reactors for Plasma Processing 113 | 113 |
Electron Sources and Beams 159 | 159 |
Ion Sources and Beams 189 | 189 |
Capacitive RF Electrical Discharges in Gases 417 | 417 |
ThinFilm Deposition by Evaporative Condensation | 451 |
Microwave Electrical Discharges in Gases 464 | 464 |
Plasma Chemical Vapor Deposition PCVD 502 | 502 |
Plasma Etching 540 | 540 |
Appendices 614 | 614 |
B Physical Constants 623 | 623 |
Other editions - View all
Industrial Plasma Engineering: Volume 2: Applications to ..., Volume 2 J Reece Roth Limited preview - 2001 |
Common terms and phrases
abnormal glow discharge active species adhesion argon beam bombardment cathode characteristic chemical reactions coating configuration corona corona discharges deposition rate dielectric Dielectric Barrier Discharges discussed in section effect electric field electron kinetic temperature electron number density energetic ions equation etching process etching rate etching reactions exposure fabrication gas flow gases glow discharge plasma illustrated in figure industrial plasma input intermediate-pressure ion energy ion implantation ion-beam ionization ISBN low-pressure magnetic field magnetron material mean free paths microelectronic microwave plasma molecular fragments monolayers mTorr OAUGDP operating parameters plasma etching plasma ion implantation plasma processing plasma reactor plasma sources plasma-assisted polymers potential power supply produce pumping range reaction products reactive regime RF glow discharge RF power schematic shown in figure silicon sputter deposition sputtered atoms sputtering yield subsystem surface energy target thermal thin films thin-film deposition Torr uniformity vacuum system velocity voltage Volume wafer wettability workpiece
Bibliographic information
| Title | Industrial Plasma Engineering: Volume 2 - Applications to Nonthermal Plasma Processing Volume 2 of Industrial Plasma Engineering, J. Reece Roth |
| Author | J Reece Roth |
| Edition | illustrated |
| Publisher | CRC Press, 2001 |
| ISBN | 0750305452, 9780750305457 |
| Length | 658 pages |
| Subjects | › › Science / Physics / General |
| Export Citation | BiBTeX EndNote RefMan |